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| (R) STPS16L40CT LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION NEGLIGIBLE SWITCHING LOSSES ALLOWING HIGH FREQUENCY OPERATION AVALANCHE RATED A1 2x8A 40 V 150 C 0.45 V A1 K A2 A2 K DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB this device is intended for use in low voltage, high frequency converters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 140C = 0.5 Per diode Per device Value 40 30 8 16 180 1 2 - 65 to + 150 150 10000 Unit V A A A A A A C C V/s TO-220AB tp = 10 ms sinusoidal tp=2 s square F=1kHz tp = 100 s square *: dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj July 1999 - Ed : 5A 1/4 STPS16L40CT THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) Junction to case Parameter Per diode Total Coupling Value 2.2 1.3 0.3 Unit C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equation : P = 0.26 x IF(AV) + 0.024 IF2(RMS) IF = 8 A IF = 8 A IF = 16 A IF = 16 A 0.55 0.39 VR = VRRM 15 Min. Typ. Max. 0.7 35 0.5 0.45 0.63 0.64 Unit mA mA V VF * Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus temperature ( = 0.5) (per diode). ambient PF(av)(W) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 = 0.05 = 0.1 = 0.2 = 0.5 =1 T IF(av) (A) 0 1 2 3 4 5 6 7 =tp/T tp 9 8 7 6 5 4 3 2 1 0 IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=15C/W T =tp/T tp Tamb(C) 50 75 100 125 150 8 9 10 0 25 2/4 STPS16L40CT Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values) (per diode). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration . 120 100 80 IM(A) 1.0 0.8 Tc=25C Zth(j-c)/Rth(j-c) 0.6 0.4 = 0.5 60 40 IM Tc=75C = 0.2 = 0.1 Tc=125C t T 20 0 1E-3 0.2 =0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-4 Single pulse tp(s) 1E-2 =tp/T tp 1E-3 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values) (per diode). Fig. 6: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(pF) 2000 2E+2 1E+2 1E+1 1E+0 1E-1 IR(mA) Tj=150C Tj=125C F=1MHz Tj=25C 1000 500 Tj=75C Tj=25C 200 VR(V) 1E-2 VR(V) 35 40 0 5 10 15 20 25 30 100 1 2 5 10 20 50 Fig. 7: Forward voltage drop versus forward current (maximum values) (per diode). 100.0 IFM(A) Typical values Tj=150C 10.0 Tj=125C Tj=25C 1.0 Tj=75C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 3/4 STPS16L40CT PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Ordering type Marking Package TO-220AB Weight 2g Base qty 50 Delivery mode Tube STPS16L40CT STPS16L40CT Epoxy meets UL94,V0 Cooling method : C Recommended torque value : 0.55 m.N Maximum torque value : 0.70 m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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